Get Sic Mosfet at Millennium Semiconductors
SiC MOSFETs biggest advantage is that it can be used to eliminate tail current during switching; the outcome of which is faster operation, reduced switching loss, and increased stabilization. It also has lower ON resistance and a compact chip size resulting in reduced capacitance and gate charge. SiC demonstrates superior material properties over Silicon (Si) devices. SiC minimal ON-resistance increases, and enables greater package miniaturization and energy savings, as compared to Silicon (Si) devices, in which the ON resistance with increased temperature can more than double. Silicon Carbide (SiC) MOSFETs as compared to their Silicon counterparts are lower on state resistance and exhibit higher blocking voltage and higher thermal conductivity. SiC MOSFETs and Silicon MOSFETs are designed and essentially processed in similar manner. ROHM: SCT Series of 3rd-generation trench-gate type SiC MOSFETs have been recently introduced by ROHM. It is available in 6 variants(650V/1200V). The...