4 Things to Know About IGBT Based Power Semiconductors

 

IGBT-based power semiconductors form an integral part of a wide range of electrical applications. However, what are IGBT-based power semiconductors, their applications, and how efficient are IGBT-based power semiconductors compared to MOFSET? Millennium Semiconductors, one of the leading IGBT power module distributors, talks about these vital aspects for a better understanding of IGBT-based power semiconductors.

What are IGBT-Based Power Semiconductors?

A power semiconductor controls or switches current in electrical circuits. It includes the power metal-oxide-semiconductor field-effect transistor (MOSFET), Bipolar Junction Transistor (BJT), power diode, Thyristor, and an Insulated Bipolar Transistor (IGBT). So, an IGBT integrates a Bipolar Junction Transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). Let us now look at the uses of IGBT-based power semiconductors.

What are the Uses of IGBT-Based Power Semiconductors?

As per industry experts, IGBT provides better thermal performance efficiency. Hence, it is widely used in electronic products and power electronics applications, including power supplies and converters, due to its switching speed.

IGBT-based power semiconductors are used in consumer devices, industrial applications, and automobiles. Additionally, their adoption is increasingly seen in IGBTs with three-phase high output motor control inverters in EVs/ HEVs, resonance circuits for home appliances, and boost control in industrial power and supplies and UPS. But then, IGBT-based power semiconductor vs. MOFSET, which one’s better? Let us find out the answer.

IGBT-Based Power Semiconductor Vs. MOSFET

Semiconductors and MOSFET have a similar gate structure (metal-oxide-semiconductor type). Hence, usually, IGBT-based power semiconductor’s gate-drive needs are similar to current rated power and comparable voltage MOSFET. Nevertheless, some of the vital differences between IGBT-based power semiconductor and MOFSET, as per their gate drive requirements include,

• IGBTs have a higher threshold gate-emitter voltage, needed to maintain the semiconductor device in saturation at the given collector current. Hence, the VGE should be a minimum of 15 V. But in the case of MOFSETs, a VGS of 10 V is enough to maintain saturation across current and temperature.
• IGBT-based power semiconductor has a lower gate-emitter capacitance than similarly-rated MOFSET. Hence, IGBTs series gate turn-on resistor value is always preferred to be higher, which minimizes the potential for the resultant and ringing EMI and restricts the turn-on dt/dv.

Is it Possible to Parallel an IGBT-Based Power Semiconductor?

Yes. It is possible to parallel an IGBT-based power semiconductor if you take the following precautionary measures.

•  The device must be fixed on common heat copper/ sink substrate.
•  The gate-drive layout for every paralleled IGBT is symmetrical.
• A matching and individual 2 to 4 Ω resistor must be placed in series with every gate of the device to reduce the chance of potential gate-voltage oscillations in one semiconductor device, coupling in other.
• With respect to sinking and sourcing current capacity, the gate driver is good enough to ensure fast-switching speeds.

Millennium Semiconductors – The Leading Distributor of IGBT Power Modules

Millennium Semiconductors is a leading distributor of IGBT power modules. The company partners with a range of electronic components and sensor manufacturers across the world. Additionally, the company’s distribution network and capabilities enable it to distribute electronic components throughout the country. For more information, connect with Millennium Semiconductors at +91 20 27484800 or info@millenniumsemi.com.

Summary

As a vital part of electronic devices, this blog from Millennium Semiconductors, the top IGBT power module distributor, focuses on a few aspects of IGBT-based power semiconductors, such as their meaning and applications and a comparison of IGBT and MOSFET.